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  Datasheet File OCR Text:
 SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistor 2SA1773
TO-252
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breadown voltage Large current capacity (IC=2A)
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Tc=25 Junction Tmeperature Storage Temperature Tj Tstg Symbol VCBO VCEO VEBO IC IC Pc Rating -400 -400 -5 -2 -4 1 15 150 -55 to 150 Unit V V V A A W W
3.80
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1
SMD Type
2SA1773
Electrical Characteristics Ta = 25
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Gain- Bandwidth Product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output Capacitance Turn-ON Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton Testconditons VCB=-300V,IE=0 VEB=-4V,IC=0 VCE=-10V,IC=-100mA VCE=-10V,IC=-50mA IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA IC=-10iA,IE=0 IC=-1mA,RBE= IE=-10iA,IC=0 VCB=-30V,f=1MHz -400 -400 -5 40 Min
Transistors
Typ
Max -0.1 -0.1 200
Unit iA iA
40 -1.0 -1.0
MHz V V V V V
25 0.12
pF
Storage Time
tstg
3
is
Fall Time
tf
0.3
hFE Classification
Rank hFE C 40 to 80 D 60 to 120 E 100 to 200
2
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